製造零件編號

Infineon IPP Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-220 IPP80N06S207AKSA4

RS庫存編號:: 217-2568
製造零件編號:: IPP80N06S207AKSA4
製造商:: Infineon

Infineon IPP Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-220 IPP80N06S207AKSA4

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 10 件）*

TWD872.00

(不含稅)

TWD915.60

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每包*
10 - 10	TWD87.20	TWD872.00
20 - 20	TWD85.10	TWD851.00
30 +	TWD83.70	TWD837.00

* 參考價格

RS庫存編號:: 217-2568
製造零件編號:: IPP80N06S207AKSA4
製造商:: Infineon

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	IPP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	86nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series IPP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 86nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPP80N06S207AKSA4

The Infineon 55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, TO-220, OptiMOS™.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green package (lead free)

Ultra low Rds(on)

100% Avalanche tested

Infineon IPP Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-220 IPP80N06S207AKSA4

相關連結