Infineon IPP Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 229-1846
- 製造零件編號:
- IPP120P04P4L03AKSA2
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 50 件)*
TWD3,725.00
(不含稅)
TWD3,911.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 500 件從 2026年1月08日 起裝運發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 100 | TWD74.50 | TWD3,725.00 |
| 150 - 200 | TWD71.60 | TWD3,580.00 |
| 250 + | TWD67.20 | TWD3,360.00 |
* 參考價格
- RS庫存編號:
- 229-1846
- 製造零件編號:
- IPP120P04P4L03AKSA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.65mm | |
| Height | 2.54mm | |
| Width | 15.95 mm | |
| Automotive Standard | AEC | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.65mm | ||
Height 2.54mm | ||
Width 15.95 mm | ||
Automotive Standard AEC | ||
Infineon Series IPP MOSFET, 120A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IPP120P04P4L03AKSA2
This silicon MOSFET is designed for high performance within various applications. The component features a TO-220 package that enhances its capability for effective thermal dissipation. With a maximum continuous drain current of 120A and a drain-source voltage of 40V, it offers excellent operational flexibility in demanding environments. The MOSFET operates efficiently across a wide temperature range, making it suitable for automotive and industrial applications.
Features & Benefits
• P-channel enhancement mode ensures efficient switching performance
• AEC qualified, meeting rigorous automotive standards
• Maximum operating temperature of +175°C allows for demanding requirement
• MSL1 rating supports high-temperature reflow processes
Applications
• Used in automotive control systems for efficient power management
• Effective for electric motor drive in robotics
• Incorporated into power supply circuits in industrial machinery
• Suitable for consumer electronics where compact size is essential
What is the significance of the maximum continuous drain current rating?
The maximum continuous drain current rating indicates the highest amount of current the device can handle under normal operating conditions, which is essential for ensuring reliability in applications demanding high current capacity.
How does the low Rds(on) contribute to power efficiency?
A low Rds(on) reduces power losses during operation, allowing devices to run cooler and enhancing overall system energy efficiency, which is particularly beneficial in battery-operated designs.
What safety features does this component offer for harsh environments?
This device is 100% avalanche tested, ensuring it can withstand transient conditions without failure, which is crucial for protecting circuits in unpredictable environments such as automotive and industrial applications.
What performance characteristics should one consider when integrating this component into existing systems?
Key characteristics like gate threshold voltage, maximum gate-source voltage, and thermal resistance should be evaluated to ensure compatibility with existing circuit designs and to optimise performance.
How does the operating temperature range enhance its usability in different applications?
With an operating temperature range from -55°C to +175°C, this MOSFET is versatile enough for use across a broad spectrum of applications, from extreme cold environments to high-temperature operational settings.
相關連結
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