製造零件編號

Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2

RS庫存編號:: 217-2506
製造零件編號:: IPB65R095C7ATMA2
製造商:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2

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小計（1 包，共 5 件）*

TWD760.00

(不含稅)

TWD798.00

訂單超過 $1,300.00 免費送貨

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單位	每單位	每包*
5 - 245	TWD152.00	TWD760.00
250 - 495	TWD148.00	TWD740.00
500 +	TWD146.00	TWD730.00

* 參考價格

RS庫存編號:: 217-2506
製造零件編號:: IPB65R095C7ATMA2
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	129W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	4.57mm
	Width	9.45 mm
	Length	10.31mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 129W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 4.57mm
	Width 9.45 mm
	Length 10.31mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB65R095C7ATMA2

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines thee experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits off a switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Increased MOSFET dv/dt ruggedness

Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg

Best in class RDS(on)/package

Easy to use/drive

Pb-free plating, halogen free mold compound

Qualified for industrial grade applications according to JEDEC(J-STD20 andJESD22)

Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2

訂單超過 $1,300.00 免費送貨

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