Infineon CoolMOS Type N-Channel MOSFET, 7.6 A, 500 V N, 3-Pin TO-220 IPAN50R500CEXKSA1
- RS庫存編號:
- 217-2495
- 製造零件編號:
- IPAN50R500CEXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD452.00
(不含稅)
TWD474.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 380 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 80 | TWD22.60 | TWD452.00 |
| 100 + | TWD22.30 | TWD446.00 |
* 參考價格
- RS庫存編號:
- 217-2495
- 製造零件編號:
- IPAN50R500CEXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 28W | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 29.85mm | |
| Length | 16.1mm | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 28W | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 29.85mm | ||
Length 16.1mm | ||
Width 4.8 mm | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Reduced energy stored in output capacitance (E oss)
High body diode ruggedness
Reduced reverse recovery charge (Q rr )
Reduced gate charge (Q g )
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