Infineon 500V CoolMOS CE Type N-Channel MOSFET, 6.6 A, 500 V N, 3-Pin TO-220
- RS庫存編號:
- 218-2993
- 製造零件編號:
- IPA50R950CEXKSA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD860.00
(不含稅)
TWD903.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 250 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD17.20 | TWD860.00 |
| 100 - 150 | TWD16.70 | TWD835.00 |
| 200 + | TWD16.20 | TWD810.00 |
* 參考價格
- RS庫存編號:
- 218-2993
- 製造零件編號:
- IPA50R950CEXKSA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | 500V CoolMOS CE | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Height | 29.75mm | |
| Length | 16.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series 500V CoolMOS CE | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Height 29.75mm | ||
Length 16.15mm | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. It provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and
offering the best cost down performance ratio available on the market.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
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