Infineon P7 Type N-Channel MOSFET, 9 A, 950 V P, 3-Pin TO-220
- RS庫存編號:
- 217-2491
- 製造零件編號:
- IPA95R750P7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD1,890.00
(不含稅)
TWD1,984.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 400 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD37.80 | TWD1,890.00 |
| 100 - 150 | TWD36.70 | TWD1,835.00 |
| 200 + | TWD35.60 | TWD1,780.00 |
* 參考價格
- RS庫存編號:
- 217-2491
- 製造零件編號:
- IPA95R750P7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-220 | |
| Series | P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.65mm | |
| Height | 29.75mm | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-220 | ||
Series P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.65mm | ||
Height 29.75mm | ||
Width 4.9 mm | ||
Automotive Standard No | ||
The Infineon latest 950V CoolMOS™ P7 series sets a new bench mark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Best-in-class FOMRDS (on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Best-in-class CoolMOS™ quality and reliability
Fully optimized portfolio
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