Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 46 A, 100 V Enhancement, 8-Pin PDFN56 TSM160N10LCR
- RS庫存編號:
- 216-9698
- 製造零件編號:
- TSM160N10LCR
- 製造商:
- Taiwan Semiconductor
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- RS庫存編號:
- 216-9698
- 製造零件編號:
- TSM160N10LCR
- 製造商:
- Taiwan Semiconductor
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 6.2mm | |
| Standards/Approvals | RoHS 2011/65/EU and in accordance to WEEE 2002/96/EC | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 6.2mm | ||
Standards/Approvals RoHS 2011/65/EU and in accordance to WEEE 2002/96/EC | ||
Width 5.2 mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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