Name: Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 51 A, 60 V Enhancement, 8-Pin PDFN56 TSM130NB06LCR
Brand: Taiwan Semiconductor
SKU: 216-9689
Price: 50.40 TWD
Availability: Discontinued

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Taiwan Semiconductor
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	51A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PDFN56
	Series	TSM025
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Power Dissipation Pd	83W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	5.2 mm
	Length	6.2mm
	Height	1.1mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Taiwan Semiconductor
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 51A
	Maximum Drain Source Voltage Vds 60V
	Package Type PDFN56
	Series TSM025
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Power Dissipation Pd 83W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 5.2 mm
	Length 6.2mm
	Height 1.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet-TSM130NB06LCR

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 51 A, 60 V Enhancement, 8-Pin PDFN56 TSM130NB06LCR

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