Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 104 A, 60 V Enhancement, 8-Pin PDFN56 TSM045NB06CR
- RS庫存編號:
- 216-9659
- 製造零件編號:
- TSM045NB06CR
- 製造商:
- Taiwan Semiconductor
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查看批量定價選項小計（1 包，共 10 件）*
TWD1,017.00
(不含稅)
TWD1,067.80
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD101.70 | TWD1,017.00 |
| 630 - 1240 | TWD99.20 | TWD992.00 |
| 1250 + | TWD97.80 | TWD978.00 |
* 參考價格
- RS庫存編號:
- 216-9659
- 製造零件編號:
- TSM045NB06CR
- 製造商:
- Taiwan Semiconductor
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 104nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 104nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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