Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 161 A, 40 V Enhancement, 8-Pin PDFN56 TSM025NB04LCR
- RS庫存編號:
- 216-9650
- 製造零件編號:
- TSM025NB04LCR
- 製造商:
- Taiwan Semiconductor
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD1,011.00
(不含稅)
TWD1,061.60
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD101.10 | TWD1,011.00 |
| 630 - 1240 | TWD98.40 | TWD984.00 |
| 1250 + | TWD96.90 | TWD969.00 |
* 參考價格
- RS庫存編號:
- 216-9650
- 製造零件編號:
- TSM025NB04LCR
- 製造商:
- Taiwan Semiconductor
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 161A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Maximum Power Dissipation Pd | 135W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 161A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Maximum Power Dissipation Pd 135W | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
相關連結
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PDFN56