Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1

RS庫存編號:: 215-2539
製造零件編號:: IPP60R099P7XKSA1
製造商:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1

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RS庫存編號:: 215-2539
製造零件編號:: IPP60R099P7XKSA1
製造商:: Infineon

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P7
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	45nC
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	117W
	Maximum Operating Temperature	150°C
	Height	4.57mm
	Standards/Approvals	No
	Length	10.36mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P7
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 45nC
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 117W
	Maximum Operating Temperature 150°C
	Height 4.57mm
	Standards/Approvals No
	Length 10.36mm
	Automotive Standard No

Infineon CoolMOS™ P7 Series MOSFET, 31A Continuous Drain Current, 600V Drain Source Voltage - IPP60R099P7XKSA1

This MOSFET is a high-performance power component designed specifically for high-voltage applications. With a maximum continuous drain current of 31A and a maximum drain-source voltage of 600V, it is housed in a TO-220 package, making it suitable for through-hole mounting. Its exceptional specifications make it ideal for advanced electronic designs across various industries.

Features & Benefits

• Suitable for both hard and soft switching use

• Significantly reduces switching and conduction losses

• Excellent robust body diode for hard commutation

• High ESD protection exceeding 2kV for reliable performance

• Enhancement mode configuration simplifies circuit design

Applications

• Ideal for PFC (Power Factor Correction) stages

• Used in hard-switching PWM (Pulse Width Modulation)

• Applicable in resonant switching stages for various electronics

• Suitable for adapters and LCD/PDP TVs

• Utilised in lighting solutions, server equipment, and telecom systems

What is the significance of the low RDS(on) value in this device?

A low RDS(on) value of 0.099 ohm minimises conduction losses, enhancing the efficiency of power conversion in applications where heat generation is a concern.

How does its working temperature range impact its performance?

Operating effectively between -55°C and +150°C, it ensures reliability and stability even in extreme conditions, making it suitable for diverse environments.

Can it be used in parallel configurations?

Yes, for parallel configurations, the use of ferrite beads on the gate or separate totem poles is generally recommended to prevent oscillation and ensure stable operation.