製造零件編號

Infineon CoolMOS P7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220

RS庫存編號:: 217-2558
製造零件編號:: IPP60R080P7XKSA1
製造商:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD3,765.00

(不含稅)

TWD3,953.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 400 件從 2026年1月05日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
50 - 50	TWD75.30	TWD3,765.00
100 - 150	TWD73.60	TWD3,680.00
200 +	TWD72.10	TWD3,605.00

* 參考價格

RS庫存編號:: 217-2558
製造零件編號:: IPP60R080P7XKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	37A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P7
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	129W
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Operating Temperature	150°C
	Height	29.95mm
	Length	10.36mm
	Width	4.57 mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 37A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P7
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 129W
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Operating Temperature 150°C
	Height 29.95mm
	Length 10.36mm
	Width 4.57 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPP60R080P7XKSA1

The Infineon 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Infineon CoolMOS P7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220

訂單超過 $1,300.00 免費送貨

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