Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252

此圖片僅供參考,請參閲產品詳細資訊及規格

暫時無法供應
我們無法確定此產品何時有貨,RS 預計將其從我們的產品目錄中移除。
RS庫存編號:
214-9035
製造零件編號:
IPD30N06S223ATMA2
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

6.5mm

Height

2.3mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.

It is Automotive AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

相關連結