Infineon OptiMOS N-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-252 IPD15N06S2L64ATMA2
- RS庫存編號:
- 214-9033
- 製造零件編號:
- IPD15N06S2L64ATMA2
- 製造商:
- Infineon
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- RS庫存編號:
- 214-9033
- 製造零件編號:
- IPD15N06S2L64ATMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 47W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 47W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 55V Drain Source Voltage, 19A Continuous Drain Current - IPD15N06S2L64ATMA2
This MOSFET is a power switching transistor designed for high-demand automotive and industrial environments, providing controlled conduction of current in N-channel enhancement mode across a wide temperature range. It is suitable for surface‑mounted PCB designs where efficient switching and durability under elevated temperatures are required.
Features and Benefits:
• 55 V maximum drain‑source voltage for demanding voltage margins
• 19 A continuous drain current for high‑current switching performance
• 64 mΩ maximum Rds(on) for reduced conduction losses
• 47 W maximum power dissipation for robust thermal handling
• 11 nC typical gate charge for fast switching transitions
• 20 V maximum gate‑source rating for flexible gate‑drive levels
• 19 A continuous drain current for high‑current switching performance
• 64 mΩ maximum Rds(on) for reduced conduction losses
• 47 W maximum power dissipation for robust thermal handling
• 11 nC typical gate charge for fast switching transitions
• 20 V maximum gate‑source rating for flexible gate‑drive levels
Applications
• Suitable for automotive power distribution modules
• Ideal for DC-DC converter switch stages
• Used with motor‑drive circuits in vehicles
• Can be used for high‑speed load switching in control units
• Appropriate for surface‑mount power management on Compact boards
• Ideal for DC-DC converter switch stages
• Used with motor‑drive circuits in vehicles
• Can be used for high‑speed load switching in control units
• Appropriate for surface‑mount power management on Compact boards
What temperature range can it operate within?
It functions across −55 °C to 175 °C, accommodating low‑temperature starts and high‑temperature engine‑bay conditions.
How does the package support PCB assembly?
The component is supplied in a TO‑252 surface‑mount package sized 6.5 x 6.22 mm which suits automated soldering processes.
What is the channel configuration and mode of operation?
It uses an N‑type channel and operates in enhancement mode requiring a positive gate‑source voltage to conduct.
What forward conduction characteristic should designers expect?
Expect a forward voltage of 1.3 V during conduction which factors into voltage‑drop and thermal calculations.
Are there limits on gate‑drive magnitude?
The gate‑source voltage must not exceed 20 V to prevent gate‑region overstress.
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