製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-263

RS庫存編號:: 214-4467
製造零件編號:: IRL1404ZSTRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 800 件）*

TWD24,160.00

(不含稅)

TWD25,368.00

訂單超過 $1,300.00 免費送貨

有庫存

5,600 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
800 - 800	TWD30.20	TWD24,160.00
1600 - 2400	TWD29.60	TWD23,680.00
3200 +	TWD29.00	TWD23,200.00

* 參考價格

RS庫存編號:: 214-4467
製造零件編號:: IRL1404ZSTRLPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	200A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.9mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	230W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	110nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 200A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.9mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 230W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 110nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRL1404ZSTRLPBF

This Infineon utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

It is lead-free

Infineon HEXFET Type N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-263

訂單超過 $1,300.00 免費送貨

相關連結