Infineon HEXFET Type N-Channel MOSFET, 87 A, 30 V, 3-Pin TO-263 IRF3709ZSTRRPBF
- RS庫存編號:
- 214-4451
- 製造零件編號:
- IRF3709ZSTRRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD504.00
(不含稅)
TWD529.20
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 300 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 190 | TWD50.40 | TWD504.00 |
| 200 - 390 | TWD49.20 | TWD492.00 |
| 400 + | TWD48.20 | TWD482.00 |
* 參考價格
- RS庫存編號:
- 214-4451
- 製造零件編號:
- IRF3709ZSTRRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness
It has product qualification according to JEDEC standard
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