Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263 IRF1404ZSTRLPBF

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包裝方式:
RS庫存編號:
214-4442
製造零件編號:
IRF1404ZSTRLPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.7mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

200W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

150nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

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