製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263

RS庫存編號:: 214-4441
製造零件編號:: IRF1404ZSTRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 800 件）*

TWD29,040.00

(不含稅)

TWD30,496.00

訂單超過 $1,300.00 免費送貨

有庫存

2,400 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
800 - 3200	TWD36.30	TWD29,040.00
4000 +	TWD35.20	TWD28,160.00

* 參考價格

RS庫存編號:: 214-4441
製造零件編號:: IRF1404ZSTRLPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.7mΩ
	Maximum Power Dissipation Pd	200W
	Typical Gate Charge Qg @ Vgs	150nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.7mΩ
	Maximum Power Dissipation Pd 200W
	Typical Gate Charge Qg @ Vgs 150nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRF1404ZSTRLPBF

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263

訂單超過 $1,300.00 免費送貨

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