Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247
- RS庫存編號:
- 214-4430
- 製造零件編號:
- IPW60R037P7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD5,286.00
(不含稅)
TWD5,550.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 240 件從 2027年4月08日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD176.20 | TWD5,286.00 |
| 60 - 90 | TWD172.60 | TWD5,178.00 |
| 120 + | TWD169.20 | TWD5,076.00 |
* 參考價格
- RS庫存編號:
- 214-4430
- 製造零件編號:
- IPW60R037P7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Maximum Power Dissipation Pd | 255W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series 600V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Maximum Power Dissipation Pd 255W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
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