Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 10 A, 700 V N, 3-Pin TO-220
- RS庫存編號:
- 214-4358
- 製造零件編號:
- IPAN70R450P7SXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD1,475.00
(不含稅)
TWD1,549.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 250 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD29.50 | TWD1,475.00 |
| 100 - 150 | TWD28.70 | TWD1,435.00 |
| 200 + | TWD27.80 | TWD1,390.00 |
* 參考價格
- RS庫存編號:
- 214-4358
- 製造零件編號:
- IPAN70R450P7SXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-220 | |
| Series | 700V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 13.1nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 22.7W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.68mm | |
| Height | 4.85mm | |
| Width | 16.15 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-220 | ||
Series 700V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 13.1nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 22.7W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.68mm | ||
Height 4.85mm | ||
Width 16.15 mm | ||
Automotive Standard No | ||
The 700V Cool MOS P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains.
It supports less magnetic size with lower BOM costs
It has high ESD ruggedness
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