Infineon OptiMOS 5 Type N-Channel MOSFET, 49 A, 80 V N, 8-Pin SuperSO BSC117N08NS5ATMA1
- RS庫存編號:
- 214-4328
- 製造零件編號:
- BSC117N08NS5ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 15 件）*
TWD478.50
(不含稅)
TWD502.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 13,605 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 1245 | TWD31.90 | TWD478.50 |
| 1260 - 2490 | TWD31.10 | TWD466.50 |
| 2505 + | TWD29.20 | TWD438.00 |
* 參考價格
- RS庫存編號:
- 214-4328
- 製造零件編號:
- BSC117N08NS5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SuperSO | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SuperSO | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
It is ideal for hot-swap and e-fuse applications
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