STMicroelectronics STWA68N65DM6 N-Channel MOSFET, 48 A, 650 V Enhancement, 3-Pin TO-247 STWA68N65DM6

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
RS庫存編號:
212-2108
製造零件編號:
STWA68N65DM6
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Series

STWA68N65DM6

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

48 A

Maximum Drain Source Voltage (Vds)

650 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-247

Maximum Drain Source Resistance (Rds)

0.059 Ω

Mount Type

Through Hole

MDMesh M6 MOSFET N-CH


The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converter.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

相關連結

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。