製造零件編號

STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247

RS庫存編號:: 204-3947
製造零件編號:: STW50N65DM6
製造商:: STMicroelectronics

STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 30 件）*

TWD6,147.00

(不含稅)

TWD6,454.20

訂單超過 $1,300.00 免費送貨

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從 2026年7月02日發貨

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單位	每單位	每管*
30 - 30	TWD204.90	TWD6,147.00
60 - 90	TWD198.70	TWD5,961.00
120 +	TWD192.80	TWD5,784.00

* 參考價格

RS庫存編號:: 204-3947
製造零件編號:: STW50N65DM6
製造商:: STMicroelectronics

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	DM6
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	91mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	52.5nC
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	175°C
	Length	15.75mm
	Standards/Approvals	No
	Height	20.15mm
	Width	5.15 mm
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series DM6
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 91mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 52.5nC
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 175°C
	Length 15.75mm
	Standards/Approvals No
	Height 20.15mm
	Width 5.15 mm
	Automotive Standard No

Datasheet - STW50N65DM6

COO (Country of Origin):: CN

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247

訂單超過 $1,300.00 免費送貨

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