STMicroelectronics MDmesh DM6 Type N-Channel MOSFET, 72 A, 650 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 225-0678
- 製造零件編號:
- STWA68N65DM6AG
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 管，共 30 件）*
TWD8,946.00
(不含稅)
TWD9,393.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 510 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD298.20 | TWD8,946.00 |
| 90 - 120 | TWD289.30 | TWD8,679.00 |
| 150 + | TWD283.50 | TWD8,505.00 |
* 參考價格
- RS庫存編號:
- 225-0678
- 製造零件編號:
- STWA68N65DM6AG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | MDmesh DM6 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Maximum Power Dissipation Pd | 480W | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.1mm | |
| Width | 15.8 mm | |
| Standards/Approvals | No | |
| Length | 40.92mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series MDmesh DM6 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Maximum Power Dissipation Pd 480W | ||
Maximum Operating Temperature 150°C | ||
Height 5.1mm | ||
Width 15.8 mm | ||
Standards/Approvals No | ||
Length 40.92mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
629
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