STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO-247-4 STW68N65DM6-4AG

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RS庫存編號:
210-8748
製造零件編號:
STW68N65DM6-4AG
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

72 A

Maximum Drain Source Voltage (Vds)

650 V

Pin Count

4

Package Type

TO-247-4

Maximum Drain Source Resistance (Rds)

39 mΩ

Mount Type

Through Hole

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.

Designed for automotive applications

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Excellent switching performance thanks to the extra driving source pin

Zener-protected

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