Vishay SQJQ142E Type N-Channel MOSFET, 460 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ142E-T1_GE3
- RS庫存編號:
- 210-5058
- 製造零件編號:
- SQJQ142E-T1_GE3
- 製造商:
- Vishay
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可享批量折扣
小計（1 包，共 5 件）*
TWD400.00
(不含稅)
TWD420.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,000 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 495 | TWD80.00 | TWD400.00 |
| 500 - 995 | TWD78.00 | TWD390.00 |
| 1000 + | TWD76.60 | TWD383.00 |
* 參考價格
- RS庫存編號:
- 210-5058
- 製造零件編號:
- SQJQ142E-T1_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 460A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK (8x8L) | |
| Series | SQJQ142E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 175°C | |
| Width | 8.1 mm | |
| Standards/Approvals | No | |
| Height | 1.7mm | |
| Length | 8mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 460A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK (8x8L) | ||
Series SQJQ142E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 175°C | ||
Width 8.1 mm | ||
Standards/Approvals No | ||
Height 1.7mm | ||
Length 8mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK 8 x 8L package type.
TrenchFET® Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
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