Vishay SQJQ144AE Type N-Channel MOSFET, 575 A, 40 V Enhancement, 8-Pin PowerPAK (8x8L)
- RS庫存編號:
- 204-7197
- 製造零件編號:
- SQJQ144AE-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2000 件）*
TWD94,200.00
(不含稅)
TWD98,920.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月21日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 8000 | TWD47.10 | TWD94,200.00 |
| 10000 + | TWD45.70 | TWD91,400.00 |
* 參考價格
- RS庫存編號:
- 204-7197
- 製造零件編號:
- SQJQ144AE-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 575A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJQ144AE | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 600W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 1.7 mm | |
| Height | 8mm | |
| Length | 8.2mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 575A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJQ144AE | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 600W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Width 1.7 mm | ||
Height 8mm | ||
Length 8.2mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has a thin 1.6 mm package.
Very low thermal resistance
TrenchFET Gen IV power MOSFET
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