製造零件編號

Vishay SQJ152ELP Type N-Channel MOSFET, 123 A, 40 V Enhancement, 4-Pin SO-8

RS庫存編號:: 210-5046
製造零件編號:: SQJ152ELP-T1_GE3
製造商:: Vishay

Vishay SQJ152ELP Type N-Channel MOSFET, 123 A, 40 V Enhancement, 4-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD39,900.00

(不含稅)

TWD41,880.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 3,000 個，準備發貨

單位	每單位	每卷*
3000 - 12000	TWD13.30	TWD39,900.00
15000 +	TWD12.90	TWD38,700.00

* 參考價格

RS庫存編號:: 210-5046
製造零件編號:: SQJ152ELP-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	123A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SO-8
	Series	SQJ152ELP
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	136W
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Width	6.25 mm
	Standards/Approvals	No
	Height	1.1mm
	Length	5mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 123A
	Maximum Drain Source Voltage Vds 40V
	Package Type SO-8
	Series SQJ152ELP
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 136W
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Width 6.25 mm
	Standards/Approvals No
	Height 1.1mm
	Length 5mm
	Automotive Standard AEC-Q101

Datasheet - SQJ152ELP-T1_GE3

The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK SO-8L package type with 123 A drain current.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Vishay SQJ152ELP Type N-Channel MOSFET, 123 A, 40 V Enhancement, 4-Pin SO-8

訂單超過 $1,300.00 免費送貨

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