Vishay SiR882BDP Type N-Channel MOSFET, 67.5 A, 100 V Enhancement, 8-Pin SO-8 SiR882BDP-T1-RE3
- RS庫存編號:
- 210-5007
- 製造零件編號:
- SiR882BDP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD325.00
(不含稅)
TWD341.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月31日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD32.50 | TWD325.00 |
| 750 - 1490 | TWD31.60 | TWD316.00 |
| 1500 + | TWD31.10 | TWD311.00 |
* 參考價格
- RS庫存編號:
- 210-5007
- 製造零件編號:
- SiR882BDP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 67.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | SiR882BDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83.3W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Width | 5.26 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 67.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series SiR882BDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83.3W | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Width 5.26 mm | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8 package type.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
相關連結
- Vishay SiR882BDP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8 SIR178DP-T1-RE3
- Vishay SiDR140DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8 SIDR140DP-T1-RE3
- Vishay SiDR220DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8 SIDR220DP-T1-RE3
- Vishay SiR Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIR4409DP-T1-RE3
- Vishay SiDR392DP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIDR392DP-T1-RE3
- Vishay SiDR680ADP Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIDR680ADP-T1-RE3
- Vishay SiR680LDP Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIR680LDP-T1-RE3