Vishay SiR180ADP Type N-Channel MOSFET, 137 A, 60 V Enhancement, 8-Pin SO-8 SiR180ADP-T1-RE3
- RS庫存編號:
- 210-5001
- 製造零件編號:
- SiR180ADP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD286.00
(不含稅)
TWD300.30
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,125 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD57.20 | TWD286.00 |
| 750 - 1495 | TWD55.40 | TWD277.00 |
| 1500 + | TWD55.00 | TWD275.00 |
* 參考價格
- RS庫存編號:
- 210-5001
- 製造零件編號:
- SiR180ADP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiR180ADP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83.3W | |
| Typical Gate Charge Qg @ Vgs | 46.2nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.26 mm | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiR180ADP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83.3W | ||
Typical Gate Charge Qg @ Vgs 46.2nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 5.26 mm | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8 package type.
TrenchFET Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
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