Vishay SiDR626LDP Type N-Channel MOSFET, 204 A, 60 V Enhancement, 8-Pin SO-8 SiDR626LDP-T1-RE3
- RS庫存編號:
- 210-4957
- 製造零件編號:
- SiDR626LDP-T1-RE3
- 製造商:
- Vishay
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TWD559.00
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TWD586.95
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- 加上 5,680 件從 2026年6月29日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD111.80 | TWD559.00 |
| 750 - 1495 | TWD109.20 | TWD546.00 |
| 1500 + | TWD107.40 | TWD537.00 |
* 參考價格
- RS庫存編號:
- 210-4957
- 製造零件編號:
- SiDR626LDP-T1-RE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 204A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SiDR626LDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.9mm | |
| Height | 0.51mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 204A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SiDR626LDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.9mm | ||
Height 0.51mm | ||
Automotive Standard No | ||
The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8DC package type.
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Top side cooling feature provides additional venue for thermal transfer
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