Toshiba TK090A65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-220 TK090A65Z,S4X(S
- RS庫存編號:
- 206-9723
- 製造零件編號:
- TK090A65Z,S4X(S
- 製造商:
- Toshiba
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 50 件)*
TWD6,165.00
(不含稅)
TWD6,473.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 200 | TWD123.30 | TWD6,165.00 |
| 250 + | TWD119.60 | TWD5,980.00 |
* 參考價格
- RS庫存編號:
- 206-9723
- 製造零件編號:
- TK090A65Z,S4X(S
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | TK090A65Z | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.7mm | |
| Width | 10 mm | |
| Length | 28mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series TK090A65Z | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.7mm | ||
Width 10 mm | ||
Length 28mm | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.
Low drain-source on-resistance 0.075 ?
Storage temperature -55 to 150°C
相關連結
- Toshiba TK090A65Z Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Toshiba DTMOSIV Type N-Channel MOSFET 800 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 80 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S
