N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
- RS庫存編號:
- 827-6097
- 製造零件編號:
- TK100A06N1,S4X(S
- 製造商:
- Toshiba
此圖片僅供參考，請參閲產品詳細資訊及規格
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當前暫無庫存，可於06/04/2023發貨，6 工作日送達。
單價（不含稅） /個 (每包:4個)
TWD67.50
(不含稅)
TWD70.88
(含稅)
| 單位 | Per unit | Per Pack* |
| 4 - 36 | TWD67.50 | TWD270.00 |
| 40 - 76 | TWD66.00 | TWD264.00 |
| 80 - 196 | TWD64.30 | TWD257.20 |
| 200 - 996 | TWD62.80 | TWD251.20 |
| 1000 + | TWD61.00 | TWD244.00 |
| * 參考價格 | ||
包裝方式：
- RS庫存編號:
- 827-6097
- 製造零件編號:
- TK100A06N1,S4X(S
- 製造商:
- Toshiba
- COO (Country of Origin):
- CN
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
MOSFET Transistors, Toshiba
規格
| 屬性 | 值 |
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 45 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V |
| Length | 10mm |
| Maximum Operating Temperature | +150 °C |
| Width | 4.5mm |
| Height | 15mm |
| Series | TK |