DiodesZetex DMP32 Type P-Channel MOSFET, 37 A, 30 V Enhancement, 8-Pin PowerDI5060 DMP32M6SPS-13
- RS庫存編號:
- 206-0126
- 製造零件編號:
- DMP32M6SPS-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
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TWD529.00
(不含稅)
TWD555.40
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD52.90 | TWD529.00 |
| 630 - 1240 | TWD51.60 | TWD516.00 |
| 1250 + | TWD50.80 | TWD508.00 |
* 參考價格
- RS庫存編號:
- 206-0126
- 製造零件編號:
- DMP32M6SPS-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI5060 | |
| Series | DMP32 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.75mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2.3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.15 mm | |
| Height | 0.9mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI5060 | ||
Series DMP32 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.75mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2.3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.15 mm | ||
Height 0.9mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V,8 pin P- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 1.3 W thermal power dissipation.
High conversion efficiency
Low RDS(ON) – minimizes on state losses
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