DiodesZetex DMP4013 Type P-Channel MOSFET, 61 A, 40 V Enhancement, 8-Pin PowerDI5060 DMP4013SPS-13
- RS庫存編號:
- 206-0132
- 製造零件編號:
- DMP4013SPS-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD827.50
(不含稅)
TWD869.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,575 件從 2026年1月12日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 600 | TWD33.10 | TWD827.50 |
| 625 - 1225 | TWD32.30 | TWD807.50 |
| 1250 + | TWD31.80 | TWD795.00 |
* 參考價格
- RS庫存編號:
- 206-0132
- 製造零件編號:
- DMP4013SPS-13
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DMP4013 | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.15 mm | |
| Height | 0.9mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DMP4013 | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.15 mm | ||
Height 0.9mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 40V,8 pin P- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 1.6 W thermal power dissipation.
Low on-resistance
Fast switching speed
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