onsemi NTB Type N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 205-2495
- 製造零件編號:
- NTBS9D0N10MC
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 800 件）*
TWD35,600.00
(不含稅)
TWD37,376.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 800 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 800 | TWD44.50 | TWD35,600.00 |
| 1600 + | TWD43.60 | TWD34,880.00 |
* 參考價格
- RS庫存編號:
- 205-2495
- 製造零件編號:
- NTBS9D0N10MC
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Width | 9.6 mm | |
| Standards/Approvals | RoHS | |
| Length | 14.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Width 9.6 mm | ||
Standards/Approvals RoHS | ||
Length 14.6mm | ||
Automotive Standard No | ||
The ON Semiconductor single N-channel 100V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 60A
Drain to source on resistance rating is 9.0mohm
Low RDS(on) to minimize conduction losses
Optimized switching performance
Low QG and capacitance to minimize driver losses
Industry’s lowest Qrr and softest body-diode for superior low noise switching
Lowers switching noise/EMI
High efficiency with lower switching spike and EMI
Package type is D2PAK3
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