onsemi PowerTrench N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN 5 x 6 NTMFS011N15MC
- RS庫存編號:
- 205-2426
- 製造零件編號:
- NTMFS011N15MC
- 製造商:
- onsemi
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- RS庫存編號:
- 205-2426
- 製造零件編號:
- NTMFS011N15MC
- 製造商:
- onsemi
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | PowerTrench | |
| Package Type | PQFN 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 13.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type PQFN 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The ON Semiconductor Power Trench series 150V N-Channel MV MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max rDS(on) = 11.5mohm at VGS is 10V, ID is 35A
Low Conduction Loss
Max rDS(on) is 13.2mohm at VGS is 8V, ID is 18A
50% lower Qrr than other mosfet suppliers
Lowers switching noise /EMI
MSL1 robust package design
100% UIL tested
Low Conduction Loss
Max rDS(on) is 13.2mohm at VGS is 8V, ID is 18A
50% lower Qrr than other mosfet suppliers
Lowers switching noise /EMI
MSL1 robust package design
100% UIL tested
