onsemi PowerTrench Type N-Channel MOSFET, 35 A, 150 V Enhancement, 8-Pin WDFN FDMS86200
- RS庫存編號:
- 739-4850
- 製造零件編號:
- FDMS86200
- 製造商:
- onsemi
可享批量折扣
小計（1 件）*
TWD102.00
(不含稅)
TWD107.10
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 749 | TWD102.00 |
| 750 - 1499 | TWD100.00 |
| 1500 + | TWD99.00 |
* 參考價格
- RS庫存編號:
- 739-4850
- 製造零件編號:
- FDMS86200
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | PowerTrench | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series PowerTrench | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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