Vishay Dual SiSF06DN 2 N-Channel MOSFET, 101 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISF06DN-T1-GE3
- RS庫存編號:
- 204-7260
- 製造零件編號:
- SISF06DN-T1-GE3
- 製造商:
- Vishay
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TWD914.00
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TWD959.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年10月19日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD45.70 | TWD914.00 |
| 760 - 1480 | TWD44.60 | TWD892.00 |
| 1500 + | TWD43.90 | TWD878.00 |
* 參考價格
- RS庫存編號:
- 204-7260
- 製造零件編號:
- SISF06DN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiSF06DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0045Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 69.4W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.73mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiSF06DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0045Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 69.4W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.73mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Width 3.3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Common Drain Dual N-Channel 30 V (S1-S2) MOSFET is an integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package.
Very low source-to-source on resistance
TrenchFET Gen IV power MOSFET
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