Vishay SiDR392DP Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 204-7233
- 製造零件編號:
- SIDR392DP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD167,700.00
(不含稅)
TWD176,100.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月07日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD55.90 | TWD167,700.00 |
| 6000 - 9000 | TWD54.20 | TWD162,600.00 |
| 12000 + | TWD52.60 | TWD157,800.00 |
* 參考價格
- RS庫存編號:
- 204-7233
- 製造零件編號:
- SIDR392DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiDR392DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.62mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 188nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiDR392DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.62mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 188nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Length 6.15mm | ||
Automotive Standard No | ||
The Vishay N-Channel 30 V (D-S) MOSFET has a Top side cooling feature provides additional venue for thermal transfer. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
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