Vishay SiDR104ADP N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiDR104ADP-T1-RE3

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RS庫存編號:
204-7218
製造零件編號:
SiDR104ADP-T1-RE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Series

SiDR104ADP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

100W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.15mm

Length

6.25mm

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM). It is tuned for the lowest RDS x Qoss FOM.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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