製造零件編號

Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8

RS庫存編號:: 204-7199
製造零件編號:: SiR626ADP-T1-RE3
製造商:: Vishay

Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD109,500.00

(不含稅)

TWD114,960.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年1月29日發貨

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單位	每單位	每卷*
3000 - 12000	TWD36.50	TWD109,500.00
15000 +	TWD35.70	TWD107,100.00

* 參考價格

RS庫存編號:: 204-7199
製造零件編號:: SiR626ADP-T1-RE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	165A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SO-8
	Series	SiR626ADP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.75mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	104W
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	83nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	6.25mm
	Standards/Approvals	No
	Width	1.12 mm
	Length	5.26mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 165A
	Maximum Drain Source Voltage Vds 60V
	Package Type SO-8
	Series SiR626ADP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.75mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 104W
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 83nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 6.25mm
	Standards/Approvals No
	Width 1.12 mm
	Length 5.26mm
	Automotive Standard No

Datasheet - SiR626ADP-T1-RE3

The Vishay N-Channel 60 V (D-S) MOSFET is tuned for the lowest RDS - Qoss FOM.

Package Power PAK SO-8

TrenchFET Gen IV power MOSFET

Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8

訂單超過 $1,300.00 免費送貨

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