STMicroelectronics ST Type N-Channel MOSFET, 25 A, 600 V Depletion, 3-Pin TO-263 STB33N60DM6

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包裝方式:
RS庫存編號:
202-5496
製造零件編號:
STB33N60DM6
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

ST

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.115Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

35nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

190W

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

4.6 mm

Length

10.4mm

Standards/Approvals

No

Height

15.85mm

Automotive Standard

No

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.

Extremely high dv/dt ruggedness

Zener-protected

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