STMicroelectronics ST Type N-Channel MOSFET, 25 A, 600 V Depletion, 3-Pin TO-263 STB33N60DM6
- RS庫存編號:
- 202-5496
- 製造零件編號:
- STB33N60DM6
- 製造商:
- STMicroelectronics
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TWD391.00
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TWD410.56
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 248 | TWD195.50 | TWD391.00 |
| 250 - 498 | TWD190.00 | TWD380.00 |
| 500 + | TWD186.50 | TWD373.00 |
* 參考價格
- RS庫存編號:
- 202-5496
- 製造零件編號:
- STB33N60DM6
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | ST | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.115Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 15.85mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series ST | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.115Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 15.85mm | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Extremely high dv/dt ruggedness
Zener-protected
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