STMicroelectronics ST Type N-Channel MOSFET, 25 A, 600 V Depletion, 3-Pin TO-263
- RS庫存編號:
- 202-5495
- 製造零件編號:
- STB33N60DM6
- 製造商:
- STMicroelectronics
可享批量折扣
查看批量定價選項小計（1 卷，共 1000 件）*
TWD141,600.00
(不含稅)
TWD148,680.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD141.60 | TWD141,600.00 |
| 2000 + | TWD137.30 | TWD137,300.00 |
* 參考價格
- RS庫存編號:
- 202-5495
- 製造零件編號:
- STB33N60DM6
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | ST | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.115Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 190W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15.85mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series ST | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.115Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 190W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15.85mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Extremely high dv/dt ruggedness
Zener-protected
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