STMicroelectronics SCT Type N-Channel MOSFET, 20 A, 1200 V Depletion, 3-Pin Hip-247
- RS庫存編號:
- 202-5491
- 製造零件編號:
- SCTWA20N120
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD14,646.00
(不含稅)
TWD15,378.30
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD488.20 | TWD14,646.00 |
| 150 + | TWD473.50 | TWD14,205.00 |
* 參考價格
- RS庫存編號:
- 202-5491
- 製造零件編號:
- SCTWA20N120
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.189Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 3.6V | |
| Maximum Power Dissipation Pd | 175W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 200°C | |
| Length | 16.02mm | |
| Height | 41.37mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.189Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 3.6V | ||
Maximum Power Dissipation Pd 175W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 200°C | ||
Length 16.02mm | ||
Height 41.37mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
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