Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS63DN-T1-GE3
- RS庫存編號:
- 200-6848
- 製造零件編號:
- SiSS63DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD46,500.00
(不含稅)
TWD48,840.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月24日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD15.50 | TWD46,500.00 |
| 6000 + | TWD15.10 | TWD45,300.00 |
* 參考價格
- RS庫存編號:
- 200-6848
- 製造零件編號:
- SiSS63DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 127.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET Gen III | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 236nC | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.3mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 127.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET Gen III | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 236nC | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 3.3mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Width 3.3 mm | ||
Automotive Standard No | ||
The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.
TrenchFET Gen III p-channel power MOSFET
Leadership RDS(on) in compact and thermally enhanced package
100 % Rg and UIS tested
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