Vishay TrenchFET Gen IV N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8 SIDR638DP-T1-RE3
- RS庫存編號:
- 200-6839
- 製造零件編號:
- SIDR638DP-T1-RE3
- 製造商:
- Vishay
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- RS庫存編號:
- 200-6839
- 製造零件編號:
- SIDR638DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET Gen IV | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 204nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15mm | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Height | 610μm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET Gen IV | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 204nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.15mm | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Height 610μm | ||
Automotive Standard No | ||
The Vishay SIDR638DP-T1-RE3 is a N-channel 40V (D-S) MOSFET.
TrenchFET Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
Top side cooling feature provides additional venue for thermal transfer
100 % Rg and UIS tested
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