製造零件編號

Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8 Si4425FDY-T1-GE3

RS庫存編號:: 200-6796
製造零件編號:: Si4425FDY-T1-GE3
製造商:: Vishay

Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8 Si4425FDY-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD28,800.00

(不含稅)

TWD30,240.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 6,000 個，準備發貨

單位	每單位	每卷*
3000 - 3000	TWD9.60	TWD28,800.00
6000 +	TWD9.40	TWD28,200.00

* 參考價格

RS庫存編號:: 200-6796
製造零件編號:: Si4425FDY-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18.3A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET Gen IV
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	16mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	4.8W
	Typical Gate Charge Qg @ Vgs	41nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18.3A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET Gen IV
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 16mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 4.8W
	Typical Gate Charge Qg @ Vgs 41nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Document- Si4425FDY-T1-GE3

The Vishay Si4425FDY-T1-GE3 is a P-channel 30V (D-S) MOSFET.

TrenchFET Gen IV p-channel power MOSFET

100% Rg tested

Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8 Si4425FDY-T1-GE3

訂單超過 $1,300.00 免費送貨

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