Vishay TrenchFET Gen IV Type N-Channel MOSFET, 65.8 A, 100 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 200-6865
- 製造零件編號:
- SiR106ADP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD935.00
(不含稅)
TWD981.75
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月13日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | TWD37.40 | TWD935.00 |
| 750 - 1475 | TWD36.50 | TWD912.50 |
| 1500 + | TWD35.90 | TWD897.50 |
* 參考價格
- RS庫存編號:
- 200-6865
- 製造零件編號:
- SiR106ADP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 65.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET Gen IV | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83.3W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.15mm | |
| Width | 5.15 mm | |
| Height | 6.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 65.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET Gen IV | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83.3W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.15mm | ||
Width 5.15 mm | ||
Height 6.15mm | ||
Automotive Standard No | ||
The Vishay SiR106ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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