Vishay TrenchFET Gen IV Type N-Channel MOSFET, 65.8 A, 100 V Enhancement, 8-Pin SO-8

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  • 2027年5月14日 發貨
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RS庫存編號:
200-6865
製造零件編號:
SiR106ADP-T1-RE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65.8A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

52nC

Maximum Power Dissipation Pd

83.3W

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

No

Height

6.15mm

Automotive Standard

No

The Vishay SiR106ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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