Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin TO-247 C3M0075120K
- RS庫存編號:
- 192-3375
- 製造零件編號:
- C3M0075120K
- 製造商:
- Wolfspeed
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD12,831.00
(不含稅)
TWD13,472.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月29日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD427.70 | TWD12,831.00 |
| 150 + | TWD419.20 | TWD12,576.00 |
* 參考價格
- RS庫存編號:
- 192-3375
- 製造零件編號:
- C3M0075120K
- 製造商:
- Wolfspeed
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | C3M | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 113.6W | |
| Maximum Gate Source Voltage Vgs | 19 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Height | 23.6mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series C3M | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 113.6W | ||
Maximum Gate Source Voltage Vgs 19 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Height 23.6mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Minimum of 1200V Vbr across entire operating temperature range
New low-impedance package with driver source
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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